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Question:
The part of a transistor which is heavily doped to produce a large number of majority carriers is :

1. base

2.emitter

3.collector

4.None of the these

Posted Date:-2021-12-17 11:32:31

More MCQS Questions and answers

  1. A p-type semiconductor is:
  2. Bonds in a semiconductor :
  3. Crystal diode is:
  4. Energy bands in solids are a consequence of:
  5. In a common base amplifier the phase difference between the input signal voltage and output voltage is :
  6. In a p-type semiconductor, current conduction is by:
  7. In binary system III represents:
  8. In full wave rectifier, input a.c. current has a frequency v. The output frequency of current is :
  9. In intrinsic semiconductor at room temperature, the number of electrons and holes are:
  10. In semi conductor which are responsible for conduction:
  11. In semi conductor, at room temperature :
  12. In the middle of the depletion layer of a reverse biased p-n junction, the:
  13. Main function of a transistor is to :
  14. n reverse biasing:
  15. Number of electrons in the valence shell of a semiconductor is:
  16. On applying reverse bias to a junction diode, it:
  17. On heating, resistance of semiconductors:
  18. p-n junction diode can be used as:
  19. Semiconductors of both p-type and n-type are produced by:
  20. The material most commonly used to manufacture electronic solid state devices is :
  21. The part of a transistor which is heavily doped to produce a large number of majority carriers is :
  22. The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by:
  23. To obtain electrons as majority charge carriers in a semiconductors the impurity mixed is:
  24. To obtain p-type silicon semiconductor, we need to dope pure silicon with:
  25. What is the number of possible crystal systems?
  26. Winch of the following gate is not an universal gate?
  27. With fall of temperature, the forbidden energy gap of a semiconductor
  28. Zener diode is used for:
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